Full metadata record
DC FieldValueLanguage
dc.contributor.authorTSANG, JSen_US
dc.contributor.authorLIOU, DCen_US
dc.contributor.authorTSAI, KLen_US
dc.contributor.authorCHEN, HRen_US
dc.contributor.authorTSAI, CMen_US
dc.contributor.authorLEE, CPen_US
dc.contributor.authorJUANG, FYen_US
dc.date.accessioned2014-12-08T15:04:31Z-
dc.date.available2014-12-08T15:04:31Z-
dc.date.issued1993-05-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.352741en_US
dc.identifier.urihttp://hdl.handle.net/11536/3016-
dc.description.abstractA new ridge waveguide laser array with stable fundamental mode operation has been fabricated. By introducing absorption regions in all the laser stripes except for the central one, the electric field distribution of the laser arrays and the modal gains of the array supermodes are changed, resulting in fundamental mode operation. The threshold current of an array with five elements is typically 40 mA and the maximum output power is higher than 150 mW. The single-lobed far-field pattern centered at 0-degrees with full width at half maximum of 2-degrees is obtained at 1.5 times of the threshold current (I(th)).en_US
dc.language.isoen_USen_US
dc.titleFUNDAMENTAL MODE-OPERATION OF HIGH-POWER INGAAS/GAAS/ALGAAS LASER ARRAYSen_US
dc.typeNoteen_US
dc.identifier.doi10.1063/1.352741en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume73en_US
dc.citation.issue9en_US
dc.citation.spage4706en_US
dc.citation.epage4708en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1993LA32000095-
dc.citation.woscount1-
Appears in Collections:Articles