完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLiu, PTen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorHuang, MCen_US
dc.contributor.authorYang, YLen_US
dc.contributor.authorMor, YSen_US
dc.contributor.authorTsai, MSen_US
dc.contributor.authorChung, Hen_US
dc.contributor.authorHou, Jen_US
dc.contributor.authorSze, SMen_US
dc.date.accessioned2014-12-08T15:44:42Z-
dc.date.available2014-12-08T15:44:42Z-
dc.date.issued2000-11-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1394061en_US
dc.identifier.urihttp://hdl.handle.net/11536/30170-
dc.description.abstractThis work has investigated the electrical and material characteristics of post-chemical mechanical planarization (CMP) methylsilsesquioxane (MSQ). Experimental results have shown that the dielectric properties of low k MSQ deteriorate after the CMP process. However, by applying H-2-plasma post-treatment, the degraded characteristics can be restored to a similar state as that of a pre-CMP MSQ film. Material and electrical analyses were performed to elucidate the detailed mechanisms of H-2-plasma treatment on post-CMP MSQ. H-2-plasma treatment provides active hydro en radicals to passivate the dangling bonds exposed in the MSQ after the CMP process. The hydrogen-rich passivation layer is hydrophobic and effectively prevents further moisture uptake. Therefore, a degradation-free CMP process can be achieved employing H-2-plasma treatment. (C) 2000 The Electrochemical Society. S0013-4651(00)04-098-2. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleImprovement of post-chemical mechanical planarization characteristics on organic low k methylsilsesquioxane as intermetal dielectricen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1394061en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume147en_US
dc.citation.issue11en_US
dc.citation.spage4313en_US
dc.citation.epage4317en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000090053700056-
dc.citation.woscount13-
顯示於類別:期刊論文


文件中的檔案:

  1. 000090053700056.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。