On-wafer electrooptic probing using rotational deformation modulation

Abstract

On-wafer electrooptic probing of two-dimensional electric-field vector (E-vector) is demonstrated by using one laser beam and one electrooptic prober. This technique utilizes both compressed-stretched deformation and rotational deformation on the index ellipsoid of the electrooptic crystal. Both experiment and simulation were performed to map the E-vector on a circuit hoard, and the measurement error is within 2.2%.