On-wafer electrooptic probing using rotational deformation modulation

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, WH	en_US
dc.contributor.author	Kuo, WK	en_US
dc.contributor.author	Huang, SL	en_US
dc.contributor.author	Huang, YT	en_US
dc.date.accessioned	2014-12-08T15:44:53Z	-
dc.date.available	2014-12-08T15:44:53Z	-
dc.date.issued	2000-09-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/68.874244	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30295	-
dc.description.abstract	On-wafer electrooptic probing of two-dimensional electric-field vector (E-vector) is demonstrated by using one laser beam and one electrooptic prober. This technique utilizes both compressed-stretched deformation and rotational deformation on the index ellipsoid of the electrooptic crystal. Both experiment and simulation were performed to map the E-vector on a circuit hoard, and the measurement error is within 2.2%.	en_US
dc.language.iso	en_US	en_US
dc.subject	nondestructive testing	en_US
dc.subject	polarimetry	en_US
dc.title	On-wafer electrooptic probing using rotational deformation modulation	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/68.874244	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	12	en_US
dc.citation.issue	9	en_US
dc.citation.spage	1228	en_US
dc.citation.epage	1230	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000089823500038	-
dc.citation.woscount	1	-
顯示於類別：	期刊論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。