Temperature-dependent characteristics of pulse-laser-deposited (Pb,Sr)TiO3 films at low temperatures

Abstract

Pulsed laser deposition (PLD) of (Pb,Sr)TiO3 (PSrT) film on Pt/SiO2/Si at low substrate temperatures (T-s), ranging from 300-450 degrees C, has been investigated. As T-s increases, the films reveal coarsening clusters, improved crystallization of the perovskite phase, distinct capacitance-electric field (C-E) hysteretic loops and a larger dielectric constant. The 350 degrees C-deposited film shows strong (100) preferred orientation and optimum dielectric properties with the dielectric constant of similar to 620. The current density increases as the measurement temperature and the electric field increase. Moreover, PSrT films exhibit a strong negative temperature coefficient of resistance (NTCR) behavior at temperatures ranging from 100 to 390 degrees C.