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dc.contributor.authorWu, Wen-Haoen_US
dc.contributor.authorChang, Edward Y.en_US
dc.contributor.authorCheon, Hwan-Sungen_US
dc.contributor.authorKim, Sang Kyunen_US
dc.contributor.authorCho, Hyeon Moen_US
dc.contributor.authorYoon, Kyong-Hoen_US
dc.contributor.authorKim, Jong Seoben_US
dc.contributor.authorChang, Tuwonen_US
dc.contributor.authorShin, Seonghoen_US
dc.date.accessioned2014-12-08T15:44:56Z-
dc.date.available2014-12-08T15:44:56Z-
dc.date.issued2008en_US
dc.identifier.isbn978-0-8194-7381-3en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/30342-
dc.identifier.urihttp://dx.doi.org/10.1117/12.804695en_US
dc.description.abstractAmorphous Carbon Layer (ACL) and SiON system has been proven to be a good hardmask combination. These layers are formed by a high cost, low throughput CVD process. This paper discloses a reliable, low cost, high throughput process using a simple spin on layer structure. Through manipulation of various parameters, additional BARC layer is eliminated and the process is further simplified to a tri-layer structure. Also, PR/SiON/C-SOH (Carbon-Spin-On-Hardmask) system has been compared to PR / Si-SOH (Si-Spin-On-Hardmask) / C-SOH system and found their performances are comparable. This indicates the PR / Si-SOH / C-SOH process is an economical yet comparable substitute.en_US
dc.language.isoen_USen_US
dc.subjectAmorphous carbon layer (ACL)en_US
dc.subjectetch selectivityen_US
dc.subjectspin-on organic hardmasken_US
dc.subjecttri-layer resist process (TLR)en_US
dc.titleUse of Spin-On-Hard Mask Materials for nano scale patterning technologyen_US
dc.typeArticleen_US
dc.identifier.doi10.1117/12.804695en_US
dc.identifier.journalLITHOGRAPHY ASIA 2008en_US
dc.citation.volume7140en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000289407400066-
Appears in Collections:Conferences Paper


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