標題: Use of Spin-On-Hard Mask Materials for nano scale patterning technology
作者: Wu, Wen-Hao
Chang, Edward Y.
Cheon, Hwan-Sung
Kim, Sang Kyun
Cho, Hyeon Mo
Yoon, Kyong-Ho
Kim, Jong Seob
Chang, Tuwon
Shin, Seongho
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Amorphous carbon layer (ACL);etch selectivity;spin-on organic hardmask;tri-layer resist process (TLR)
公開日期: 2008
摘要: Amorphous Carbon Layer (ACL) and SiON system has been proven to be a good hardmask combination. These layers are formed by a high cost, low throughput CVD process. This paper discloses a reliable, low cost, high throughput process using a simple spin on layer structure. Through manipulation of various parameters, additional BARC layer is eliminated and the process is further simplified to a tri-layer structure. Also, PR/SiON/C-SOH (Carbon-Spin-On-Hardmask) system has been compared to PR / Si-SOH (Si-Spin-On-Hardmask) / C-SOH system and found their performances are comparable. This indicates the PR / Si-SOH / C-SOH process is an economical yet comparable substitute.
URI: http://hdl.handle.net/11536/30342
http://dx.doi.org/10.1117/12.804695
ISBN: 978-0-8194-7381-3
ISSN: 0277-786X
DOI: 10.1117/12.804695
期刊: LITHOGRAPHY ASIA 2008
Volume: 7140
Appears in Collections:Conferences Paper


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