Detection of the defects induced by boron high-energy ion implantation of silicon

Abstract

A preferential chemical etching method was used to investigate the secondary defects induced in silicon by high-energy boron ion implantation followed by a rapid thermal anneal at 1000 degrees C for 30 s in N-2 ambient. The dislocation defects in silicon can be clearly delineated by the etchant of CrO3/HF mixing solution. Moreover, a band of striation corresponding To the region of dislocation defects can be observed from the cross-sectional view micrographs of scanning electron microscopy. For the high-energy boron ion implantation at a dose of 3 x 10(14) cm(-2) and energies of 0.5 to 2 MeV studied in this worst, the defect density is estimated to be in the order of 6 x 10(6) cm(-2). Furthermore, we found a close correlation between the depth profiles of the observed etching pits and that of the implanration-induced damage. (C) 2000 The Electrochemical Society. S0013-4651(00)01-011-9. All rights reserved.