完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | YANG, FM | en_US |
dc.contributor.author | CHEN, MC | en_US |
dc.date.accessioned | 2014-12-08T15:04:33Z | - |
dc.date.available | 2014-12-08T15:04:33Z | - |
dc.date.issued | 1993-05-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1116/1.586781 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/3040 | - |
dc.description.abstract | A simple metallization process to form a shallow CoSi2 silicided contact and W-Ti diffusion barrier simultaneously has been developed. The process starts with depositions of a Co-Ti alloy layer and an overlying W layer on silicon wafers using a dual e-beam evaporation system; this is followed by a single-step annealing treatment in a normal flowing-nitrogen furnace. On the other hand, bilayer self-aligned shallow MoSi2/CoSi2/Si silicided contact can be derived from the W/Co-Mo/Si system by a two-step annealing treatment performed in the same environment. I-V characteristics for silicided p+n diodes with the diffusion barriers formed in situ were measured after they had been finished with Al deposition and post-Al annealing at temperatures from 350 to 600-degrees-C in N2. For comparison, Al/CoSi2/p+n and Al/p+n structures were also investigated. It turns out that the integrity of Al/W-Ti/CoSi2/P+n and Al/MoSi2/COSi2/P+ n silicided contacts can be preserved up to 5 50 and 500-degrees-C, respectively, for a 20 min annealing, while that of Al/CoSi2/P+n can be kept only up to 450-degrees-C. | en_US |
dc.language.iso | en_US | en_US |
dc.title | EVALUATION OF INSITU FORMED W-TI AND MOSI2 AS A DIFFUSION BARRIER TO AL FOR COSI2 SILICIDED CONTACT | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1116/1.586781 | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 11 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 744 | en_US |
dc.citation.epage | 751 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1993LH22800032 | - |
dc.citation.woscount | 5 | - |
顯示於類別: | 期刊論文 |