完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lee, JY | en_US |
dc.contributor.author | Juang, JY | en_US |
dc.contributor.author | Ou, JH | en_US |
dc.contributor.author | Chen, YF | en_US |
dc.contributor.author | Wu, KH | en_US |
dc.contributor.author | Uen, TM | en_US |
dc.contributor.author | Gou, YS | en_US |
dc.date.accessioned | 2014-12-08T15:45:06Z | - |
dc.date.available | 2014-12-08T15:45:06Z | - |
dc.date.issued | 2000-07-01 | en_US |
dc.identifier.issn | 0921-4526 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/S0921-4526(99)02981-6 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/30415 | - |
dc.description.abstract | The amplitude and periodicity of the reflection high-energy electron diffraction (RHEED) oscillations displayed strong temperature dependence in homoepitaxy of SrTiO3(STO) films. Combining with the AFM observations, the results suggest that the oscillations are not directly related to the layer-by-layer growth. (C) 2000 Elsevier Science B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | homoepitaxial SrTiO3 thin film | en_US |
dc.subject | RHEED | en_US |
dc.subject | epitaxial growth | en_US |
dc.subject | atomic force microscopy | en_US |
dc.title | RHEED intensity oscillations in homoepitaxial growth of SrTiO3 films | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/S0921-4526(99)02981-6 | en_US |
dc.identifier.journal | PHYSICA B | en_US |
dc.citation.volume | 284 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 2099 | en_US |
dc.citation.epage | 2100 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000087423100487 | - |
顯示於類別: | 會議論文 |