Novel cleaning solutions for polysilicon film post chemical mechanical polishing

標題:	Novel cleaning solutions for polysilicon film post chemical mechanical polishing
作者:	Pan, TM Lei, TF Chen, CC Chao, TS Liaw, MC Yang, WL Tsai, MS Lu, CP Chang, WH 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	cleaning;CMP;EDTA;polysilicon;TMAH
公開日期:	1-Jul-2000
摘要:	Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH4OH+H2O) alkaline aqueous solution to enhance removal of metallic and organic contamination, From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.
URI:	http://dx.doi.org/10.1109/55.847373 http://hdl.handle.net/11536/30422
ISSN:	0741-3106
DOI:	10.1109/55.847373
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	21
Issue:	7
起始頁:	338
結束頁:	340
Appears in Collections:	Articles

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