標題: | High temperature formed SiGeP-MOSFET's with good device characteristics |
作者: | Wu, YH Chin, A 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | hole mobility;P-MOSFET;reliability;SiGe |
公開日期: | 1-Jul-2000 |
摘要: | We have used a simple process to fabricate Si0.3Ge0.7/Si p-MOSFET's. The Si0.3Ge0.7 is formed using deposited Ge followed by 950 degrees C rapid thermal annealing and solid phase epitaxy that is process compatible with existing VLSI. Hole mobility of 250 cm(2)/Vs is obtained from Si0.3Ge0.7 p-MOSFET that is similar to two times higher than Si control devices and results in a consequent substantially higher current drive. The 228 Angstrom Si0.3Ge0.7 thermal oxide grown at 1000 degrees C has a high breakdown field of 15 MV/cm, low interface trap density (D-it) of 1.5 x 10(11) eV(-1) cm(-2), and low oxide charge of 7.2 x 10(10) cm(-2). The source-drain junction leakage after implantation and 950 degrees C RTA is also comparable with Si counterpart. |
URI: | http://dx.doi.org/10.1109/55.847377 http://hdl.handle.net/11536/30424 |
ISSN: | 0741-3106 |
DOI: | 10.1109/55.847377 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 21 |
Issue: | 7 |
起始頁: | 350 |
結束頁: | 352 |
Appears in Collections: | Articles |
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