High temperature formed SiGeP-MOSFET's with good device characteristics

Abstract

We have used a simple process to fabricate Si0.3Ge0.7/Si p-MOSFET's. The Si0.3Ge0.7 is formed using deposited Ge followed by 950 degrees C rapid thermal annealing and solid phase epitaxy that is process compatible with existing VLSI. Hole mobility of 250 cm(2)/Vs is obtained from Si0.3Ge0.7 p-MOSFET that is similar to two times higher than Si control devices and results in a consequent substantially higher current drive. The 228 Angstrom Si0.3Ge0.7 thermal oxide grown at 1000 degrees C has a high breakdown field of 15 MV/cm, low interface trap density (D-it) of 1.5 x 10(11) eV(-1) cm(-2), and low oxide charge of 7.2 x 10(10) cm(-2). The source-drain junction leakage after implantation and 950 degrees C RTA is also comparable with Si counterpart.