Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Liang, H. C. | en_US |
| dc.contributor.author | Huang, J. Y. | en_US |
| dc.contributor.author | Huang, S. C. | en_US |
| dc.contributor.author | Su, K. W. | en_US |
| dc.contributor.author | Chen, Y. F. | en_US |
| dc.contributor.author | Huang, K. F. | en_US |
| dc.date.accessioned | 2014-12-08T15:45:07Z | - |
| dc.date.available | 2014-12-08T15:45:07Z | - |
| dc.date.issued | 2008 | en_US |
| dc.identifier.isbn | 978-0-8194-7046-1 | en_US |
| dc.identifier.issn | 0277-786X | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/30431 | - |
| dc.identifier.uri | http://dx.doi.org/10.1117/12.763052 | en_US |
| dc.description.abstract | We demonstrate an AlGaInAs saturable absorber with a periodic quantum wells (QWs)/barrier structure that can be used to achieve an efficient high-peak-power and high-pulse-energy passively flashlamp-pumped Q-switched Nd:YAG laser at 1.06 um. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave to avoid damage. With an incident pump voltage of 14.5 J, a single pulse was generated with a pulse energy of 14 mJ and a Q-switched pulse width of 13 ns. The maximum peak power was greater than 1.08 MW. | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | flashlamp-pumped laser | en_US |
| dc.subject | semiconductor saturable absorber | en_US |
| dc.subject | passively Q-switched | en_US |
| dc.title | High-peak-power flashlamp-pumped passively Q-switched Nd : YAG laser with AlGaInAs quantum wells as a saturable absorbers - art. no. 68712M | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1117/12.763052 | en_US |
| dc.identifier.journal | SOLID STATE LASERS XVII: TECHNOLOGY AND DEVICES | en_US |
| dc.citation.volume | 6871 | en_US |
| dc.citation.spage | M8712 | en_US |
| dc.citation.epage | M8712 | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.identifier.wosnumber | WOS:000255549800077 | - |
| Appears in Collections: | Conferences Paper | |
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- Analytical model for design criteria of passively Q-switched laser / Chen, YF;Lan, YP;Chang, HL
- Simultaneous Q-switching and mode-locking in a diode-pumped Nd : YVO4-Cr4+: YAG laser / Chen, YF;Tsai, SW
- Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd : YAG laser / Huang, Y. P.;Liang, H. C.;Huang, J. Y.;Su, K. W.;Li, A.
- InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm / Huang, J. Y.;Liang, H. C.;Su, K. W.;Lai, H. C.;Chen, Y. -F.
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