1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorLiang, H. C.en_US
dc.contributor.authorHuang, J. Y.en_US
dc.contributor.authorHuang, S. C.en_US
dc.contributor.authorSu, K. W.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorHuang, K. F.en_US
dc.date.accessioned2014-12-08T15:45:07Z-
dc.date.available2014-12-08T15:45:07Z-
dc.date.issued2008en_US
dc.identifier.isbn978-0-8194-7046-1en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/30431-
dc.identifier.urihttp://dx.doi.org/10.1117/12.763052en_US
dc.description.abstractWe demonstrate an AlGaInAs saturable absorber with a periodic quantum wells (QWs)/barrier structure that can be used to achieve an efficient high-peak-power and high-pulse-energy passively flashlamp-pumped Q-switched Nd:YAG laser at 1.06 um. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave to avoid damage. With an incident pump voltage of 14.5 J, a single pulse was generated with a pulse energy of 14 mJ and a Q-switched pulse width of 13 ns. The maximum peak power was greater than 1.08 MW.en_US
dc.language.isoen_USen_US
dc.subjectflashlamp-pumped laseren_US
dc.subjectsemiconductor saturable absorberen_US
dc.subjectpassively Q-switcheden_US
dc.titleHigh-peak-power flashlamp-pumped passively Q-switched Nd : YAG laser with AlGaInAs quantum wells as a saturable absorbers - art. no. 68712Men_US
dc.typeArticleen_US
dc.identifier.doi10.1117/12.763052en_US
dc.identifier.journalSOLID STATE LASERS XVII: TECHNOLOGY AND DEVICESen_US
dc.citation.volume6871en_US
dc.citation.spageM8712en_US
dc.citation.epageM8712en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000255549800077-
顯示於類別：會議論文


文件中的檔案：

  1. 000255549800077.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。

相關內容
Loading...