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dc.contributor.authorWu, YHen_US
dc.contributor.authorHuang, CHen_US
dc.contributor.authorChen, WJen_US
dc.contributor.authorLin, CNen_US
dc.contributor.authorChin, Aen_US
dc.date.accessioned2014-12-08T15:45:09Z-
dc.date.available2014-12-08T15:45:09Z-
dc.date.issued2000-07-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1393601en_US
dc.identifier.urihttp://hdl.handle.net/11536/30439-
dc.description.abstractWe have studied the buried oxide integrity in oxygen plasma-enhanced low-temperature wafer bonding. As observed by cross-sectional scanning electron microscopy, the bonding strength of the oxygen plasma-treated sample is so large that forced separation for a 600 degrees C bonded wafer takes place at the heterointerface of the thermal oxide and the Si substrate rather than at the oxide-oxide bonding interface. The plasma-enhanced bonding shows good structure property with negligible defects as observed by cross-sectional transmission electron microscopy. From capacitance-voltage measurement, good electrical property is evidenced by the low oxide-charge and interface-trap densities of -2.0 x 10(10) cm(-2) and 3 x 10(10) eV(-1) cm(-2), respectively, from capacitance-voltage measurements. (C) 2000 The Electrochemical Society. S0013-4651(99)11-083-8. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleThe buried oxide properties in oxygen plasma-enhanced low-temperature wafer bondingen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1393601en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume147en_US
dc.citation.issue7en_US
dc.citation.spage2754en_US
dc.citation.epage2756en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000088125800055-
dc.citation.woscount6-
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