陣列式氧化鋅奈米柱之低溫合成暨電漿處理研

Abstract

高度陣列式排列的氧化鋅奈米線的製備方法是在具有氧化鋅薄膜的矽基板上，經由化學溶液法在低溫環境中過飽合析出成長氧化鋅奈米柱，透過控制實驗條件，化學溶液法能生成不同長寬比且高度陣列式排列的單晶氧化鋅奈米柱。我們研究氧化鋅奈米柱在氫氣、氧氣、氮氣及氨氣電漿處理後其物理及化學特性的變化。化學特性分析中可以看出，氮與氫離子可以由氧化鋅奈米柱的缺陷路徑成功的擴散至奈米結構中，並且與鋅及氧元素產生化學鍵結反應。而在物理發光特性的研究上，氧化鋅奈米柱經過氫氣、氮氣及氨氣電漿處理後可降低其可見光放射強度並改善發光性質最高達140倍以上，但是我們發現在長時間的氨氣電漿處理後會因為微結構的崩解導致氧化鋅奈米線的光學性質變差。最後在氧化鋅奈米柱電性量測的研究方面，我們發現氧化鋅奈米柱經由適當的氨氣電漿處理後，可以成功的製備出具有小穿遂電壓(1.5 V)的P型氧化鋅奈米柱。經由本研究的結果顯示，我們可以利用常溫的水溶液合成法結合氣體電漿處理可以製備出規則排列的摻雜化氧化鋅奈米線，並且可應用在p-n 接面和半導體異質結構的光電元件上。

Arrayed single crystal zinc oxide nanorods with different aspect ratios have been synthesized on zinc oxide film buffered with silicon substrates by low temperature chemical solution method through carefully controlling the experiment parameters. The physical and chemical properties of zinc oxide nanorods after H2, O2, N2, NH3 plasma treatments have been systematically investigated. The obtained results implied that both nitrogen and hydrogen ion can diffuse into nanostructures to form chemical bonds with zinc and oxygen ions through the paths of defects. The ratio of the intensity of Ultraviolet (UV) emission (IUV) to that of deep level emission (IDLE) can be enhanced as 140 times as those of original ones. However, the optical properties would become poor because of the destruction of nanostructures after long time NH3 plasma treatment. Finally, p-type zinc oxide nanorods with low tunneling voltage of 1.5 V can be successfully fabricated as proved by corresponding electrical measurement. Therefore, this study demonstrated that room temperature solution synthesis in combination with plasma treatment can be used to synthesize highly arrayed and oriented nitrogen-doped zinc oxide nanorods in the application of a p-n junction and semiconductor heterostructures for the optoelectronic devices.