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dc.contributor.authorShown, CSen_US
dc.contributor.authorChi, Sen_US
dc.date.accessioned2014-12-08T15:45:11Z-
dc.date.available2014-12-08T15:45:11Z-
dc.date.issued2000-06-22en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20000823en_US
dc.identifier.urihttp://hdl.handle.net/11536/30455-
dc.description.abstractA new structure for CMOS compatible thermoelectric infrared sensors is proposed. By using micro-link structures to connect several floating membranes, the largest floating membrane area yet obtained and large output voltages have been realised. The characteristics of the sensors have been measured, and are compared with those of existing devices.en_US
dc.language.isoen_USen_US
dc.titleCMOS compatible thermoelectric infrared sensorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20000823en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume36en_US
dc.citation.issue13en_US
dc.citation.spage1117en_US
dc.citation.epage1118en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000087981100016-
dc.citation.woscount0-
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