標題: Improvement of polysilicon oxide integrity using NF3-annealing
作者: Yang, WL
Shieh, MS
Chen, YM
Chao, TS
Liu, DG
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: polyoxide;NF3-annealing;nitrogen;fluorine;SILC
公開日期: 15-Jun-2000
摘要: We report a method to improve the polysilicon oxide integrity by using NF3-annealing. Incorporating with stronger Si-N and Si-F bonds at the polysilicon/polyoxide interface, significant improvements are found in terms of roughness, breakdown strength, charge-to-breakdown, and stress-induced-leakage-current.
URI: http://dx.doi.org/10.1143/JJAP.39.L562
http://hdl.handle.net/11536/30461
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.L562
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 39
Issue: 6B
起始頁: L562
結束頁: L563
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