Improvement of polysilicon oxide integrity using NF3-annealing

標題:	Improvement of polysilicon oxide integrity using NF3-annealing
作者:	Yang, WL Shieh, MS Chen, YM Chao, TS Liu, DG Lei, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	polyoxide;NF3-annealing;nitrogen;fluorine;SILC
公開日期:	15-六月-2000
摘要:	We report a method to improve the polysilicon oxide integrity by using NF3-annealing. Incorporating with stronger Si-N and Si-F bonds at the polysilicon/polyoxide interface, significant improvements are found in terms of roughness, breakdown strength, charge-to-breakdown, and stress-induced-leakage-current.
URI:	http://dx.doi.org/10.1143/JJAP.39.L562 http://hdl.handle.net/11536/30461
ISSN:	0021-4922
DOI:	10.1143/JJAP.39.L562
期刊:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume:	39
Issue:	6B
起始頁:	L562
結束頁:	L563
顯示於類別：	期刊論文

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