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dc.contributor.authorJEN, TSen_US
dc.contributor.authorCHEN, JYen_US
dc.contributor.authorSHIN, NFen_US
dc.contributor.authorHONG, JWen_US
dc.contributor.authorCHANG, CYen_US
dc.date.accessioned2014-12-08T15:04:33Z-
dc.date.available2014-12-08T15:04:33Z-
dc.date.issued1993-04-15en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/11536/3046-
dc.description.abstractTo improve the electroluminescence (EL) intensity of the hydrogenated amorphous silicon carbide (a-SiC:H) pin thin-film light-emitting diode (TFLED), a quantum-well-injection (QWI) structure has been incorporated into the i-layer of an a-SiC:H pin TFLED at the p-i interface. The obtained brightness of this QWI TFLED is 256 cd/m2 at an injection current density of 800 mA/cm2, which is about three orders of magnitude higher than the brightness of an a-SiC:H pin TFLED. Also, a comparatively lower EL threshold voltage of 6 V was observed for this a-SiC:H QWI TFLED.en_US
dc.language.isoen_USen_US
dc.subjectLIGHT-EMITTING DIODESen_US
dc.subjectTHIN-FILM DEVICESen_US
dc.titleHYDROGENATED AMORPHOUS SILICON-CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH QUANTUM-WELL-INJECTION STRUCTUREen_US
dc.typeArticleen_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume29en_US
dc.citation.issue8en_US
dc.citation.spage707en_US
dc.citation.epage708en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1993LB77100042-
dc.citation.woscount4-
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