HYDROGENATED AMORPHOUS SILICON-CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH QUANTUM-WELL-INJECTION STRUCTURE

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	JEN, TS	en_US
dc.contributor.author	CHEN, JY	en_US
dc.contributor.author	SHIN, NF	en_US
dc.contributor.author	HONG, JW	en_US
dc.contributor.author	CHANG, CY	en_US
dc.date.accessioned	2014-12-08T15:04:33Z	-
dc.date.available	2014-12-08T15:04:33Z	-
dc.date.issued	1993-04-15	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3046	-
dc.description.abstract	To improve the electroluminescence (EL) intensity of the hydrogenated amorphous silicon carbide (a-SiC:H) pin thin-film light-emitting diode (TFLED), a quantum-well-injection (QWI) structure has been incorporated into the i-layer of an a-SiC:H pin TFLED at the p-i interface. The obtained brightness of this QWI TFLED is 256 cd/m2 at an injection current density of 800 mA/cm2, which is about three orders of magnitude higher than the brightness of an a-SiC:H pin TFLED. Also, a comparatively lower EL threshold voltage of 6 V was observed for this a-SiC:H QWI TFLED.	en_US
dc.language.iso	en_US	en_US
dc.subject	LIGHT-EMITTING DIODES	en_US
dc.subject	THIN-FILM DEVICES	en_US
dc.title	HYDROGENATED AMORPHOUS SILICON-CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH QUANTUM-WELL-INJECTION STRUCTURE	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	29	en_US
dc.citation.issue	8	en_US
dc.citation.spage	707	en_US
dc.citation.epage	708	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1993LB77100042	-
dc.citation.woscount	4	-
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