標題: | HYDROGENATED AMORPHOUS-SILICON CARBIDE P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYERS INSERTED AT P-I INTERFACE |
作者: | JEN, TS PAN, JW SHIN, NF TSAY, WC HONG, JW CHANG, CY 電控工程研究所 Institute of Electrical and Control Engineering |
關鍵字: | HYDROGENATED AMORPHOUS SILICON CARBIDE (A-SIC, H);LIGHT-EMITTING DIODE (LED);BARRIER LAYER;ELECTROLUMINESCENCE |
公開日期: | 1-一月-1994 |
摘要: | To improve the electroluminescence (EL) intensity of the hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diode (TFLED), a barrier-layer (BL) structure had been inserted at its p-i interface and used to enhance the hole injection efficiency of TFLED under forward-bias operation. Two TFLEDs with different BL structures were studied. The device I had a 25 Angstrom A i-type single-barrier structure and the device II had an i-type double-barrier structure of barrier (10 Angstrom A)/well(10 Angstrom A)/barrier(10 Angstrom A). The obtainable brightness of device I was 342 cd/m(2) at an injection current density of 600 mA/cm(2). On the other hand, the device II had a brightness of 256 cd/ m(2) at 800 mA/cm(2). These brightnesses were about 3 orders of magnitude higher than that of a basic a-SiC:H p-i-n TFLED. |
URI: | http://dx.doi.org/10.1143/JJAP.33.827 http://hdl.handle.net/11536/2717 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.33.827 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 33 |
Issue: | 1B |
起始頁: | 827 |
結束頁: | 831 |
顯示於類別: | 會議論文 |