標題: | HYDROGENATED AMORPHOUS SILICON-CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH QUANTUM-WELL-INJECTION STRUCTURE |
作者: | JEN, TS CHEN, JY SHIN, NF HONG, JW CHANG, CY 電控工程研究所 Institute of Electrical and Control Engineering |
關鍵字: | LIGHT-EMITTING DIODES;THIN-FILM DEVICES |
公開日期: | 15-四月-1993 |
摘要: | To improve the electroluminescence (EL) intensity of the hydrogenated amorphous silicon carbide (a-SiC:H) pin thin-film light-emitting diode (TFLED), a quantum-well-injection (QWI) structure has been incorporated into the i-layer of an a-SiC:H pin TFLED at the p-i interface. The obtained brightness of this QWI TFLED is 256 cd/m2 at an injection current density of 800 mA/cm2, which is about three orders of magnitude higher than the brightness of an a-SiC:H pin TFLED. Also, a comparatively lower EL threshold voltage of 6 V was observed for this a-SiC:H QWI TFLED. |
URI: | http://hdl.handle.net/11536/3046 |
ISSN: | 0013-5194 |
期刊: | ELECTRONICS LETTERS |
Volume: | 29 |
Issue: | 8 |
起始頁: | 707 |
結束頁: | 708 |
顯示於類別: | 期刊論文 |