標題: Improved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation
作者: Chen, CC
Lin, HC
Chang, CY
Huang, TY
Chien, CH
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jun-2000
摘要: Effects of fluorine incorporation on ultrathin (4 nm) gate oxide integrity were investigated by fluorine co-implantation into p(+) polysilicon gate. In contrast to previous reports that fluorine incorporation worsens boron penetration and degrades oxide reliability, it was observed that with a medium F+ dose (similar to 1 x 10(14) cm(-2)), charge-to-breakdown characteristics can be improved without noticeable enhancement of boron penetration. It was also observed that fluorinated oxide depicts improved immunity to plasma damage as is evidenced by suppressed gate leakage current of antenna devices after plasma processing. (C) 2000 The Electrochemical Society. S1099-0062(00)01-101-9. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1391127
http://hdl.handle.net/11536/30503
ISSN: 1099-0062
DOI: 10.1149/1.1391127
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 3
Issue: 6
起始頁: 290
結束頁: 292
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