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| Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy | 106 |
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| 檢視 | |
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| Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy | 106 |
| 檢視 | |
|---|---|
| 000087239400022.pdf | 7 |
| 檢視 | |
|---|---|
| 中國 | 98 |
| 美國 | 8 |
| 檢視 | |
|---|---|
| Shenzhen | 96 |
| Menlo Park | 7 |
| Beijing | 2 |
| Wilmington | 1 |