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dc.contributor.authorHuang, HTen_US
dc.contributor.authorChen, MJen_US
dc.contributor.authorChen, JHen_US
dc.contributor.authorSu, CWen_US
dc.contributor.authorHou, CSen_US
dc.contributor.authorLiang, MSen_US
dc.date.accessioned2014-12-08T15:45:26Z-
dc.date.available2014-12-08T15:45:26Z-
dc.date.issued2000-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.39.2026en_US
dc.identifier.urihttp://hdl.handle.net/11536/30602-
dc.description.abstractThe Monte Carlo sphere model is extended to deal with the extrinsic time-dependent-dielectric-breakdown (TCDB) by incorporating the well-known "effective oxide thinning" concept. Percolation simulation, based on this model for the first time, evidences that the process defects induced extrinsic TDDB is also statistical in nature as is the intrinsic one, and is characterized by a probability function defining local oxide thinning. The experimental bimodal or even multimodal characteristics can be reproduced accordingly. Furthermore, the simulation results in the extrinsic regime are found to be sample-size (i.e., the total number of samples that span the breakdown statistics) dependent, suggesting that care should be taken when evaluating the extrinsic TDDB data in a real manufacturing process.en_US
dc.language.isoen_USen_US
dc.subjectsiliconen_US
dc.subjectCMOSen_US
dc.subjectoxide breakdownen_US
dc.subjectMonte Carteen_US
dc.subjectpercolationen_US
dc.subjectextrinsicen_US
dc.subjecteffective oxide thinningen_US
dc.titleMonte Carlo sphere model for effective oxide thinning induced extrinsic breakdownen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.39.2026en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume39en_US
dc.citation.issue4Ben_US
dc.citation.spage2026en_US
dc.citation.epage2029en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000088909300015-
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