Title: A trap generation closed-form statistical model for intrinsic oxide breakdown
Authors: Huang, HT
Chen, MJ
Su, CW
Chen, JH
Hou, CS
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Jun-2001
Abstract: A trap generation statistical model with the trap sphere radius r as parameter has been newly formulated in closed-form for intrinsic breakdown of ultrathin oxides and, by incorporating the trap filling fraction p as the secondary parameter, can be practically useful in a manufacturing process. Experimental reproduction for different oxide thicknesses and areas has been achieved through the model. A certain criterion has readily been drawn from the model, with which the ultimate thickness limit for breakdown can be set.
URI: http://dx.doi.org/10.1109/16.925260
http://hdl.handle.net/11536/29588
ISSN: 0018-9383
DOI: 10.1109/16.925260
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 48
Issue: 6
Begin Page: 1275
End Page: 1277
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