Title: | A trap generation closed-form statistical model for intrinsic oxide breakdown |
Authors: | Huang, HT Chen, MJ Su, CW Chen, JH Hou, CS Liang, MS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Issue Date: | 1-Jun-2001 |
Abstract: | A trap generation statistical model with the trap sphere radius r as parameter has been newly formulated in closed-form for intrinsic breakdown of ultrathin oxides and, by incorporating the trap filling fraction p as the secondary parameter, can be practically useful in a manufacturing process. Experimental reproduction for different oxide thicknesses and areas has been achieved through the model. A certain criterion has readily been drawn from the model, with which the ultimate thickness limit for breakdown can be set. |
URI: | http://dx.doi.org/10.1109/16.925260 http://hdl.handle.net/11536/29588 |
ISSN: | 0018-9383 |
DOI: | 10.1109/16.925260 |
Journal: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 48 |
Issue: | 6 |
Begin Page: | 1275 |
End Page: | 1277 |
Appears in Collections: | Articles |
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