| 標題: | A trap generation closed-form statistical model for intrinsic oxide breakdown |
| 作者: | Huang, HT Chen, MJ Su, CW Chen, JH Hou, CS Liang, MS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 1-Jun-2001 |
| 摘要: | A trap generation statistical model with the trap sphere radius r as parameter has been newly formulated in closed-form for intrinsic breakdown of ultrathin oxides and, by incorporating the trap filling fraction p as the secondary parameter, can be practically useful in a manufacturing process. Experimental reproduction for different oxide thicknesses and areas has been achieved through the model. A certain criterion has readily been drawn from the model, with which the ultimate thickness limit for breakdown can be set. |
| URI: | http://dx.doi.org/10.1109/16.925260 http://hdl.handle.net/11536/29588 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.925260 |
| 期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| Volume: | 48 |
| Issue: | 6 |
| 起始頁: | 1275 |
| 結束頁: | 1277 |
| Appears in Collections: | Articles |
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