NUMERICAL-SIMULATION OF SIDEGATING EFFECT IN GAAS-MESFETS

doi:10.1109/16.202780

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHANG, SJ	en_US
dc.contributor.author	LEE, CP	en_US
dc.date.accessioned	2014-12-08T15:04:34Z	-
dc.date.available	2014-12-08T15:04:34Z	-
dc.date.issued	1993-04-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.202780	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3061	-
dc.description.abstract	Two-dimensional simulation of the sidegating effect in GaAs MESFET's has been performed. The result confirms that Schottky contacts on a semi-insulating substrate cause serious high substrate leakage current and drain current reduction in GaAs MESFET's. The threshold behavior in sidegating effect is found to correlate with the conduction behavior of the Schottky-i-n(sidegate) structure when the sidegate is negatively biased. Shielding and enhancement of the sidegating effect by the Schottky contacts have also been studied and the results agree with the experimental findings. Besides, the presence of hole traps in the semi-insulating substrate is found to be essential to the sidegating effect.	en_US
dc.language.iso	en_US	en_US
dc.title	NUMERICAL-SIMULATION OF SIDEGATING EFFECT IN GAAS-MESFETS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/16.202780	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	40	en_US
dc.citation.issue	4	en_US
dc.citation.spage	698	en_US
dc.citation.epage	704	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1993KR13800003	-
dc.citation.woscount	22	-
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