Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes

Abstract

A structure for high brightness light-emitting diodes (LEDs) is demonstrated. A distributed Bragg reflector (DBR) is used to enhance the quantum efficiency of the LEDs. This unique DBR uses a composite structure that consists of two DBRs to provide both high reflectivity and wide angle reflection. For 590 nm (amber range) AlGaInP LEDs, the quantum efficiency is increased to 5.05% by using this composite DBR structure. This result is much better than those obtained from conventional DBRs, and is comparable to that of wafer bonded AlGaInP LEDs. (C) 2000 American Institute of Physics. [S0021-8979(00)01704-7].