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dc.contributor.authorChen, CCen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorLiang, MSen_US
dc.date.accessioned2014-12-08T15:45:46Z-
dc.date.available2014-12-08T15:45:46Z-
dc.date.issued2000-02-01en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1390971en_US
dc.identifier.urihttp://hdl.handle.net/11536/30790-
dc.description.abstractEffects of poly-gate doping concentration on plasma charging damage in ultrathin gate oxides were investigated. While the charge-to-breakdown (Q(bd)) value under gate injection stress polarity (-V-g) is independent of the doping concentration, eb, under substrate injection stress polarity (+V-g) shows a noticeable improvement with increasing doping concentration. However, our results show that plasma-induced oxide degradation is actually aggravated with increasing poly-gate doping concentration. These seemingly inconsistent observations can be explained by the lowering of plasma charging potential in the case of insufficient poly-gate doping. (C) 1999 The Electrochemical Society. S1099-0062(99)10-079-8. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleEffects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxidesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1390971en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume3en_US
dc.citation.issue2en_US
dc.citation.spage103en_US
dc.citation.epage105en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000085057200013-
dc.citation.woscount11-
Appears in Collections:Articles