標題: | Spin-polarized electronic current in resonant tunneling heterostructures |
作者: | Voskoboynikov, A Lin, SS Lee, CP Tretyak, O 交大名義發表 National Chiao Tung University |
公開日期: | 1-一月-2000 |
摘要: | The spin-dependent tunneling phenomenon in symmetric and asymmetric resonant semiconductor heterostructures is employed in a theoretical study to investigate the output tunnel current polarization at zero magnetic field. A simple model of the resonant tunneling structures and a simple one-electron band approximation with spin-orbit interaction are used in this work. It is shown that asymmetry in the electron distribution at the electrode regions provides spin-polarized tunnel current. An approach to optimize this spin-dependent effect is explored theoretically. In asymmetric resonant tunneling structures, we estimate theoretically that the polarization can reach 40% with a moderate applied electric field. (C) 2000 American Institute of Physics. [S0021- 8979(00)09501-3]. |
URI: | http://hdl.handle.net/11536/30810 |
ISSN: | 0021-8979 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 87 |
Issue: | 1 |
起始頁: | 387 |
結束頁: | 391 |
顯示於類別: | 期刊論文 |