標題: Spin-polarized electronic current in resonant tunneling heterostructures
作者: Voskoboynikov, A
Lin, SS
Lee, CP
Tretyak, O
交大名義發表
National Chiao Tung University
公開日期: 1-一月-2000
摘要: The spin-dependent tunneling phenomenon in symmetric and asymmetric resonant semiconductor heterostructures is employed in a theoretical study to investigate the output tunnel current polarization at zero magnetic field. A simple model of the resonant tunneling structures and a simple one-electron band approximation with spin-orbit interaction are used in this work. It is shown that asymmetry in the electron distribution at the electrode regions provides spin-polarized tunnel current. An approach to optimize this spin-dependent effect is explored theoretically. In asymmetric resonant tunneling structures, we estimate theoretically that the polarization can reach 40% with a moderate applied electric field. (C) 2000 American Institute of Physics. [S0021- 8979(00)09501-3].
URI: http://hdl.handle.net/11536/30810
ISSN: 0021-8979
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 87
Issue: 1
起始頁: 387
結束頁: 391
顯示於類別:期刊論文


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