標題: | Electron spin filtering in all-semiconductor tunneling structures |
作者: | Yu, L Huang, HC Voskoboynikov, O 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | nano-structures;spin-orbit interaction;tunneling |
公開日期: | 1-九月-2003 |
摘要: | In this work we briefly review the present day perspectives for exploiting conventional nonmagnetic semiconductor nano-technology to design high speed spin-filter devices. In recent theoretical investigations a high spin polarization has been predicted for the ballistic tunneling current in semiconductor single- and double-barrier asymmetric tunnel structures of III-V semiconductors with strong Rashba spin-orbit coupling. We show in this paper that the polarization in the tunneling can probability be sufficiently increased for producing realistic single-barrier structures by including of the Dresselhaus term into consideration. (C) 2004 Published by Elsevier Ltd. |
URI: | http://dx.doi.org/10.1016/j.spmi.2004.03.056 http://hdl.handle.net/11536/27552 |
ISSN: | 0749-6036 |
DOI: | 10.1016/j.spmi.2004.03.056 |
期刊: | SUPERLATTICES AND MICROSTRUCTURES |
Volume: | 34 |
Issue: | 3-6 |
起始頁: | 547 |
結束頁: | 552 |
顯示於類別: | 會議論文 |