標題: Improved immunity to plasma damage in ultrathin nitrided oxides
作者: Chen, CC
Lin, HC
Chang, CY
Liang, MS
Chien, CH
Hsien, SK
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: boron;dielectric breakdown;leakage current;plasma applications;semiconductor device reliability
公開日期: 1-Jan-2000
摘要: Plasma-induced damage in various 3-nm thick gate oxides (i.e., pure O-2 and N2O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a photoresist ashing step after metal pad definition, Gate leakage current measurements indicated that large leakage current occurs at the wafer center as well as at the wafer edge for pMOS devices, while it occurs only at the wafer center for nMOS devices, These interesting observations could be explained by the polarity dependence of ultrathin oxides in charge-to-breakdown measurements. Additionally, ultrathin N2O-nitrided oxides show superior immunity to charging damage, especially for pMOS devices.
URI: http://dx.doi.org/10.1109/55.817438
http://hdl.handle.net/11536/30836
ISSN: 0741-3106
DOI: 10.1109/55.817438
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 21
Issue: 1
起始頁: 15
結束頁: 17
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