標題: Carrier-carrier scattering: an experimental comparison of 5 and 3 nm AlxGa1-xAs/GaAs quantum wells
作者: Sun, KW
Sun, CK
Wang, JC
Wang, SY
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: quantum wells;electron-electron interactions;optical properties;luminescence
公開日期: 2000
摘要: We have studied carrier dynamics among highly nonequilibrium carrier distributions generated with femtosecond laser pulses in Be:AlxGa1-xAs/GaAs quantum wells with different well width at hot carrier densities between 10(9) and 10(11) cm(-2). The spectra, at moderately high densities (greater than or equal to 10(10) cm(-2)) indicate that the initially narrow electron distribution is altered in a time less than or equal to the LO-phonon emission time, as a result of rapid carrier-carrier scattering. At an excitation density of about 10(10) cm(-2), the carrier-carrier scattering rate is faster in narrower quantum wells. By measuring the intensity of the unrelaxed peak, it is possible to determine the relative rates of carrier-carrier scattering and LO-phonon emission. Our results indicate that carrier-carrier scattering becomes as significant as LO-phonon emission at a density of about 1 x 10(10) cm(-2) in the 5 nm quantum wells. (C) 2000 Elsevier Science Ltd. All rights reserved.
URI: http://hdl.handle.net/11536/30856
http://dx.doi.org/10.1016/S0038-1098(00)00189-7
ISSN: 0038-1098
DOI: 10.1016/S0038-1098(00)00189-7
期刊: SOLID STATE COMMUNICATIONS
Volume: 115
Issue: 6
起始頁: 329
結束頁: 333
顯示於類別:期刊論文


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