標題: | Carrier-carrier scattering: an experimental comparison of 5 and 3 nm AlxGa1-xAs/GaAs quantum wells |
作者: | Sun, KW Sun, CK Wang, JC Wang, SY Lee, CP 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | quantum wells;electron-electron interactions;optical properties;luminescence |
公開日期: | 2000 |
摘要: | We have studied carrier dynamics among highly nonequilibrium carrier distributions generated with femtosecond laser pulses in Be:AlxGa1-xAs/GaAs quantum wells with different well width at hot carrier densities between 10(9) and 10(11) cm(-2). The spectra, at moderately high densities (greater than or equal to 10(10) cm(-2)) indicate that the initially narrow electron distribution is altered in a time less than or equal to the LO-phonon emission time, as a result of rapid carrier-carrier scattering. At an excitation density of about 10(10) cm(-2), the carrier-carrier scattering rate is faster in narrower quantum wells. By measuring the intensity of the unrelaxed peak, it is possible to determine the relative rates of carrier-carrier scattering and LO-phonon emission. Our results indicate that carrier-carrier scattering becomes as significant as LO-phonon emission at a density of about 1 x 10(10) cm(-2) in the 5 nm quantum wells. (C) 2000 Elsevier Science Ltd. All rights reserved. |
URI: | http://hdl.handle.net/11536/30856 http://dx.doi.org/10.1016/S0038-1098(00)00189-7 |
ISSN: | 0038-1098 |
DOI: | 10.1016/S0038-1098(00)00189-7 |
期刊: | SOLID STATE COMMUNICATIONS |
Volume: | 115 |
Issue: | 6 |
起始頁: | 329 |
結束頁: | 333 |
顯示於類別: | 期刊論文 |