Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shu, CK | en_US |
| dc.contributor.author | Lee, WH | en_US |
| dc.contributor.author | Pan, YC | en_US |
| dc.contributor.author | Chen, CC | en_US |
| dc.contributor.author | Lin, HC | en_US |
| dc.contributor.author | Ou, J | en_US |
| dc.contributor.author | Chen, WH | en_US |
| dc.contributor.author | Chen, WK | en_US |
| dc.contributor.author | Lee, MC | en_US |
| dc.date.accessioned | 2014-12-08T15:45:54Z | - |
| dc.date.available | 2014-12-08T15:45:54Z | - |
| dc.date.issued | 2000 | en_US |
| dc.identifier.issn | 0038-1098 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/30860 | - |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0038-1098(00)00037-5 | en_US |
| dc.description.abstract | The optical and electrical properties of isoelectronic In-doped GaN films grown by metalorganic vapor phase epitaxy (MOVPE) were investigated by X-ray, photoluminescence (PL), Hall and Raman measurements. As a result, adequate In-doping quantity causes not only a reduction of yellow luminescence and unintentional background concentration, but an enhanced mobility and decrease in the widths. The improved crystalline and optical qualities of GaN films may be attributed to the decrease in defects. (C) 2000 Elsevier Science Ltd. All rights reserved. | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | impurities in semiconductors | en_US |
| dc.subject | optical properties | en_US |
| dc.subject | phonons | en_US |
| dc.subject | luminescence | en_US |
| dc.title | Optical and electrical investigations of isoelectronic In-doped GaN films | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1016/S0038-1098(00)00037-5 | en_US |
| dc.identifier.journal | SOLID STATE COMMUNICATIONS | en_US |
| dc.citation.volume | 114 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 291 | en_US |
| dc.citation.epage | 293 | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.identifier.wosnumber | WOS:000086375300011 | - |
| dc.citation.woscount | 12 | - |
| Appears in Collections: | Articles | |
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- Growth temperature reduction for isoelectronic As-doped GaN / Lee, WH;Huang, HY;Chen, WC;Lee, CF;Chen, WK
- Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy / Huang, HY;Shu, CK;Lin, WC;Chuang, CH;Lee, MC
- Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition / Huang, HY;Lin, WC;Lee, WH;Shu, CK;Liao, KC
- The electronic structure and optical properties of phosphorus implanted GaN films / Shu, CK;Lee, WH;Huang, HY;Chuang, CH;Chen, WK
- The effects of isoelectronic in-doping in GaN films grown by MOCVD / Shu, CK;Ou, J;Lin, HC;Pan, YC;Lee, WH
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