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dc.contributor.authorShu, CKen_US
dc.contributor.authorLee, WHen_US
dc.contributor.authorPan, YCen_US
dc.contributor.authorChen, CCen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorOu, Jen_US
dc.contributor.authorChen, WHen_US
dc.contributor.authorChen, WKen_US
dc.contributor.authorLee, MCen_US
dc.date.accessioned2014-12-08T15:45:54Z-
dc.date.available2014-12-08T15:45:54Z-
dc.date.issued2000en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://hdl.handle.net/11536/30860-
dc.identifier.urihttp://dx.doi.org/10.1016/S0038-1098(00)00037-5en_US
dc.description.abstractThe optical and electrical properties of isoelectronic In-doped GaN films grown by metalorganic vapor phase epitaxy (MOVPE) were investigated by X-ray, photoluminescence (PL), Hall and Raman measurements. As a result, adequate In-doping quantity causes not only a reduction of yellow luminescence and unintentional background concentration, but an enhanced mobility and decrease in the widths. The improved crystalline and optical qualities of GaN films may be attributed to the decrease in defects. (C) 2000 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectimpurities in semiconductorsen_US
dc.subjectoptical propertiesen_US
dc.subjectphononsen_US
dc.subjectluminescenceen_US
dc.titleOptical and electrical investigations of isoelectronic In-doped GaN filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0038-1098(00)00037-5en_US
dc.identifier.journalSOLID STATE COMMUNICATIONSen_US
dc.citation.volume114en_US
dc.citation.issue5en_US
dc.citation.spage291en_US
dc.citation.epage293en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000086375300011-
dc.citation.woscount12-
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