Comprehensive investigation on fluorosilicate glass prepared by temperature-difference-based liquid-phase deposition

Abstract

This study investigates the properties of fluorosilicate glass film prepared by temperature-difference-based liquid-phase deposition. Experimental results indicate that the deposition temperature can significantly affect the deposition rate and film properties. As the deposition temperature increases from 15 to 35 degrees C, the deposition rate increases exponentially from 30 to 687 Angstrom/h. Meanwhile, the F and OH contents increase from 2.56 to 3.49% and from 0.16 to 0.5%, respectively. The dielectric constants;ind stresses for the films deposited at 15, 25, and 35 degrees C, are 3.56/63 MPa, 3.46/43 MPa, and 3.66/73 MPa, respectively. The current densities at 2 MV/cm for the films deposited at 15, 25, and 35 degrees C are 6.9 x 10(-9), 4.6 x 10(-9), and 3.6 x 10(-7) A/cm(2), respectively. For the film deposited at 25 degrees C. the dielectric constant and the stress are minimal because of the high F content, low OH content, and low bond strain. The properties are also compared with those of fluorosilicate glass prepared by plasma-enhanced chemical vapor deposition. In addition to exhibiting a lower dielectric constant and much better resistance to moisture, the film prepared by temperature-difference-based liquid-phase deposition also shows a comparable or better insulating property, revealing a reliable intermetal dielectric with a low dielectric constant. (C) 2000 The Electrochemical Society. S0013-4651(99)04-019-7. All rights reserved.