Smart dielectrics of fluorinated silicon glass prepared by liquid phase deposition method

Abstract

Fluorinated silicon glass (FSG) film prepared by using liquid-phase deposition (LPD) is very potential for use as a smart dielectric owing to its high fluorine concentration (8.6 at %), low dielectric constant (3.46), low stress (43 Mpa), low leakage current density (4.6E-9 A/cm(2) at 2 MV/cm) and low deposition temperature (room temperature). By temperature difference and conventional water-adding methods, the LPD technologies and the key process parameters affecting the physicochemical properties and the electrical characteristics will be introduced. Furthermore, the LPD FSG has been applied as gate oxide to MOSFET's and polysilicon TFT's. Owing to its novel property of selective deposition, LPD FSG has been also employed to cap the sidewalls for degradation-free damascene trenches, and to fabricate micro contact holes for the n(+)/p diodes and the Schottky diodes.