標題: | Newly developed low-K and low-stress fluorinated silicon oxide utilizing temperature-difference liquid-phase deposition technology |
作者: | Yeh, CF Lee, YC Lee, SC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1998 |
摘要: | To meet the requirements of low-K and low-stress intermetal dielectric (IMD) for future ULSI devices, a novel temperature-difference liquid-phase deposition (TD-LPD) method is proposed. The deposition solution of supersaturated silicic acid with high concentration of fluorine can be achieved by raising deposition temperature larger than 15 degrees C from dissolution temperature (0 degrees C). Because fluorine atoms can easily be incorporated with the technique, TD-LPD fluorine-doped SiO2 (FSG) exhibits low-K (similar to 3.4) and low-stress (similar to 40MPa) property. In this paper, to study the interaction between TD-LPD FSG and moisture, the FSG is annealed and moisture stressed repeatedly as in a real process. Since K is sensitive to moisture absorption, and the stress is sensitive to the dehydration reaction between Si-OH's, the both are monitored as indices. A feasible mechanism is proposed to explain the variation in K/stress during annealing and boiling cycles. |
URI: | http://hdl.handle.net/11536/19458 |
ISBN: | 1-55899-417-3 |
ISSN: | 0272-9172 |
期刊: | LOW-DIELECTRIC CONSTANT MATERIALS IV |
Volume: | 511 |
起始頁: | 57 |
結束頁: | 62 |
顯示於類別: | 會議論文 |