標題: Newly developed low-K and low-stress fluorinated silicon oxide utilizing temperature-difference liquid-phase deposition technology
作者: Yeh, CF
Lee, YC
Lee, SC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1998
摘要: To meet the requirements of low-K and low-stress intermetal dielectric (IMD) for future ULSI devices, a novel temperature-difference liquid-phase deposition (TD-LPD) method is proposed. The deposition solution of supersaturated silicic acid with high concentration of fluorine can be achieved by raising deposition temperature larger than 15 degrees C from dissolution temperature (0 degrees C). Because fluorine atoms can easily be incorporated with the technique, TD-LPD fluorine-doped SiO2 (FSG) exhibits low-K (similar to 3.4) and low-stress (similar to 40MPa) property. In this paper, to study the interaction between TD-LPD FSG and moisture, the FSG is annealed and moisture stressed repeatedly as in a real process. Since K is sensitive to moisture absorption, and the stress is sensitive to the dehydration reaction between Si-OH's, the both are monitored as indices. A feasible mechanism is proposed to explain the variation in K/stress during annealing and boiling cycles.
URI: http://hdl.handle.net/11536/19458
ISBN: 1-55899-417-3
ISSN: 0272-9172
期刊: LOW-DIELECTRIC CONSTANT MATERIALS IV
Volume: 511
起始頁: 57
結束頁: 62
顯示於類別:會議論文