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dc.contributor.authorChen, JFen_US
dc.contributor.authorChen, NCen_US
dc.contributor.authorWang, PYen_US
dc.contributor.authorWang, JSen_US
dc.contributor.authorWeng, CMen_US
dc.date.accessioned2014-12-08T15:46:00Z-
dc.date.available2014-12-08T15:46:00Z-
dc.date.issued1999-12-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.38.L1425en_US
dc.identifier.urihttp://hdl.handle.net/11536/30941-
dc.description.abstractThe electrical properties of annealed low-temperature GaAs are studied by investigating the frequency-dependent capacitance of n-LT-i-p structures with the low-temperature (LT) layers grown at different temperatures. Relative to the sample grown at 610 degrees C, the samples grown at 200, 300 and 400 degrees C show significant capacitance dispersions over frequency which is explained by the emission of carriers from traps. Based on a proposed band diagram where a dominating trap at 0.66-0.74 eV exists in the LT layers, the high-frequency dispersion is shown to be affected by resistance-capacitance (RC) time constant effects. From the mid-frequency capacitance versus voltage characteristics, the concentrations of the occupied traps are estimated to be approximate to 10(17) cm(-3) for samples grown at 200, 300 and 400 degrees C, which are found to be consistent with those obtained from analyzing the current-voltage characteristics of n(+)-LT-n(+) structures.en_US
dc.language.isoen_USen_US
dc.subjectlow-temperature GaAsen_US
dc.subjectdeep levelsen_US
dc.subjectcapacitance-frequency spectraen_US
dc.titleCapacitance dispersion in n-LT-i-p GaAs structures with the low-temperature layers grown at different temperaturesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.38.L1425en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume38en_US
dc.citation.issue12Aen_US
dc.citation.spageL1425en_US
dc.citation.epageL1427en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000084451100024-
dc.citation.woscount0-
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