標題: | Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature |
作者: | Chen, JF Wang, JS Wang, PY Wong, HZ 電子物理學系 Department of Electrophysics |
公開日期: | 23-八月-1999 |
摘要: | Capacitance-frequency measurement is used to study In0.12Ga0.88As/GaAs p-i-n superlattice, with superlattice layer grown at 300 degrees C by molecular-beam epitaxy. Three traps are observed, and their parameters are consistent with those obtained from deep-level transient spectroscopy. Among these three traps, the trap (E-a = 0.45 +/- 0.02 eV, sigma = 6 +/- 4x10(-17) cm(2)) shows an abnormal increase of capacitance with increasing frequency, similar to that observed from the 0.66 eV trap in low-temperature grown GaAs p-i-n structure, suggesting that it is created by the low-temperature growth and is a generation-recombination center. This result also shows that the capacitance-frequency measurement is effective in studying the generation-recombination centers. (C) 1999 American Institute of Physics. [S0003-6951(99)01434-5]. |
URI: | http://hdl.handle.net/11536/31147 |
ISSN: | 0003-6951 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 75 |
Issue: | 8 |
起始頁: | 1092 |
結束頁: | 1094 |
顯示於類別: | 期刊論文 |