標題: Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
作者: Hu, TC
Chiu, SY
Dai, BT
Tsai, MS
Tung, IC
Feng, MS
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: chemical mechanical polishing;inhibitor;copper;citric acid;nitric acid
公開日期: 15-十月-1999
摘要: A novel inhibitor, citric acid, was introduced in the HNO3-based slurry for copper chemical mechanical polishing. It was anticipated that a passivation layer could be formed on the copper surface in the presence of citric acid. In a 3 vol.% HNO3 solution, the passivation effect derived from citric acid saturated as the citric acid concentration reached ca. 0.01 M. The polishing rate was found to decrease with the addition of citric acid. The results showed that the HNO3-based slurry with citric acid as an inhibitor could achieve good surface planarity for copper chemical mechanical polishing. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
URI: http://dx.doi.org/10.1016/S0254-0584(99)00138-8
http://hdl.handle.net/11536/31030
ISSN: 0254-0584
DOI: 10.1016/S0254-0584(99)00138-8
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 61
Issue: 2
起始頁: 169
結束頁: 171
顯示於類別:期刊論文


文件中的檔案:

  1. 000082687700014.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。