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dc.contributor.authorHu, TCen_US
dc.contributor.authorChiu, SYen_US
dc.contributor.authorDai, BTen_US
dc.contributor.authorTsai, MSen_US
dc.contributor.authorTung, ICen_US
dc.contributor.authorFeng, MSen_US
dc.date.accessioned2014-12-08T15:46:08Z-
dc.date.available2014-12-08T15:46:08Z-
dc.date.issued1999-10-15en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0254-0584(99)00138-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/31030-
dc.description.abstractA novel inhibitor, citric acid, was introduced in the HNO3-based slurry for copper chemical mechanical polishing. It was anticipated that a passivation layer could be formed on the copper surface in the presence of citric acid. In a 3 vol.% HNO3 solution, the passivation effect derived from citric acid saturated as the citric acid concentration reached ca. 0.01 M. The polishing rate was found to decrease with the addition of citric acid. The results showed that the HNO3-based slurry with citric acid as an inhibitor could achieve good surface planarity for copper chemical mechanical polishing. (C) 1999 Published by Elsevier Science S.A. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectchemical mechanical polishingen_US
dc.subjectinhibitoren_US
dc.subjectcopperen_US
dc.subjectcitric aciden_US
dc.subjectnitric aciden_US
dc.titleNitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishingen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0254-0584(99)00138-8en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume61en_US
dc.citation.issue2en_US
dc.citation.spage169en_US
dc.citation.epage171en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000082687700014-
dc.citation.woscount31-
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