Optimization of OMVPE-grown GaInP/GaAs quantum well interfaces

Abstract

A new and improved method of growing Al-free GaInP/GaAs quantum wells (QWs) is presented. We found that both interfaces are important for obtaining a high-quality quantum well. With an added H-2 purge and PH3 preflow procedure, we have significantly improved the GaInP on GaAs interface by eliminating the unwanted dark line region at the interface. At the GaAs on GaInP interface, we added a thin GaAsP layer. This layer effectively prevents the In memory effect at the interface. As a result of this new growth procedure, a linewidth of 6.7 meV (at 20 It) for the quantum well emission was achieved. (C) 1999 Elsevier Science B.V. All rights reserved.