Optimization of OMVPE-grown GaInP/GaAs quantum well interfaces

doi:10.1016/S0022-0248(99)00329-2

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DC 欄位	值	語言
dc.contributor.author	Chiou, SW	en_US
dc.contributor.author	Lee, CP	en_US
dc.contributor.author	Hong, JM	en_US
dc.contributor.author	Chen, CW	en_US
dc.contributor.author	Tsou, Y	en_US
dc.date.accessioned	2014-12-08T15:46:11Z	-
dc.date.available	2014-12-08T15:46:11Z	-
dc.date.issued	1999-10-01	en_US
dc.identifier.issn	0022-0248	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0022-0248(99)00329-2	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31058	-
dc.description.abstract	A new and improved method of growing Al-free GaInP/GaAs quantum wells (QWs) is presented. We found that both interfaces are important for obtaining a high-quality quantum well. With an added H-2 purge and PH3 preflow procedure, we have significantly improved the GaInP on GaAs interface by eliminating the unwanted dark line region at the interface. At the GaAs on GaInP interface, we added a thin GaAsP layer. This layer effectively prevents the In memory effect at the interface. As a result of this new growth procedure, a linewidth of 6.7 meV (at 20 It) for the quantum well emission was achieved. (C) 1999 Elsevier Science B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	high-quality quantum wells	en_US
dc.subject	GaInP/GaAs quantum wells	en_US
dc.subject	PH3	en_US
dc.title	Optimization of OMVPE-grown GaInP/GaAs quantum well interfaces	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/S0022-0248(99)00329-2	en_US
dc.identifier.journal	JOURNAL OF CRYSTAL GROWTH	en_US
dc.citation.volume	206	en_US
dc.citation.issue	3	en_US
dc.citation.spage	166	en_US
dc.citation.epage	170	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000083351700002	-
dc.citation.woscount	10	-
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