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dc.contributor.authorLin, JYen_US
dc.contributor.authorShen, WZen_US
dc.contributor.authorJou, JYen_US
dc.date.accessioned2014-12-08T15:46:14Z-
dc.date.available2014-12-08T15:46:14Z-
dc.date.issued1999-09-01en_US
dc.identifier.issn1063-8210en_US
dc.identifier.urihttp://dx.doi.org/10.1109/92.784099en_US
dc.identifier.urihttp://hdl.handle.net/11536/31096-
dc.description.abstractTo characterize the power consumption of a macrocell, a general method involves recording the power consumption of all possible input transition events in the look-up tables. However, though this approach is accurate, the size of the table becomes very large. In this paper, we propose a new power modeling technique that takes advantage of the structural information of a macrocell, In this approach, a subset of primary inputs and internal nodes in the macrocell are selected as the state variables to build a state transition graph (STG), These state variables can model the steady-state transitions completely. Moreover, by selecting the characterization patterns properly, the STG can also model the glitch power in the macrocell accurately. To further simplify the complexity of the STG, an incomplete power modeling technique is presented. Without losing much accuracy, the property of compatible patterns is exploited for a macrocell to further reduce the number of edges in the corresponding STG, Experimental results show that our modeling techniques can provide SPICE-like accuracy, while the size of the look-up table is significantly reduced.en_US
dc.language.isoen_USen_US
dc.subjectpower characterizationen_US
dc.subjectpower modeling for macrocellsen_US
dc.subjectsimulation-based RTL power estimationen_US
dc.subjectstate transition graphen_US
dc.titleA structure-oriented power modeling technique for macrocellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/92.784099en_US
dc.identifier.journalIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMSen_US
dc.citation.volume7en_US
dc.citation.issue3en_US
dc.citation.spage380en_US
dc.citation.epage391en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000082280400010-
dc.citation.woscount1-
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