Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure

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DC Field	Value	Language
dc.contributor.author	Chen, WK	en_US
dc.contributor.author	Cheng, RH	en_US
dc.contributor.author	Ou, J	en_US
dc.date.accessioned	2014-12-08T15:01:28Z	-
dc.date.available	2014-12-08T15:01:28Z	-
dc.date.issued	1997-09-08	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/11536/310	-
dc.description.abstract	We have observed negative differential resistance in InP lattice-matched InGaAs/AlAsSb/InGaAs single-barrier tunneling heterostructure. With a 10-nm-thick barrier, the diode exhibits a peak-to-valley current ratio of 4.2 (1.2) and peak current density of 54 (158) A/cm(2) at 100 K(300 K). (C) 1997 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure	en_US
dc.type	Article	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	71	en_US
dc.citation.issue	10	en_US
dc.citation.spage	1373	en_US
dc.citation.epage	1375	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:A1997XU88900031	-
dc.citation.woscount	7	-
Appears in Collections:	Articles