Characteristics of novel polysilicon oxide by anodic oxidation

Abstract

For nonvolatile memory applications, a novel oxide grown on polysilicon by anodic oxidation (anodic polyoxide) is first investigated. In this work, the electrical characteristics of anodic polyoxide is discussed and compared with the conventional thermal polyoxide. The results show that the anodic polyoxide exhibits considerably excellent characteristics, i.e., low leakage current, high breakdown electric field, and high reliabilities.