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dc.contributor.authorWu, CYen_US
dc.contributor.authorJiang, HCen_US
dc.date.accessioned2014-12-08T15:46:30Z-
dc.date.available2014-12-08T15:46:30Z-
dc.date.issued1999-06-01en_US
dc.identifier.issn1063-8210en_US
dc.identifier.urihttp://dx.doi.org/10.1109/92.766751en_US
dc.identifier.urihttp://hdl.handle.net/11536/31290-
dc.description.abstractAn improved bipolar junction transistor (BJT) based silicon retina with simple and compact structure is proposed and analyzed, In the proposed structure, the BJT smoothing network, which models the layer of horizontal cells in the vertebrate retina, is implemented by placing enhancement n-channel MOSFET's among the bases of parasitic BJT's existing in a CMOS process to form an unique and compact structure. Thus, the smoothing characteristics can be tuned in a wide range. Moreover, an extra emitter is incorporated with each BJT at the pixel to act as the row switch. This reduces the cell area of the silicon retina and increases the resolution. Using the proposed new structure, an experimental 64 x 64 BJT-based silicon retina chip has been fabricated by using 0.5-mu m CMOS technology. The measurement results on the tunability of the smooth area in the smoothing network as well as the dynamic characteristics of the proposed silicon retina in detecting moving objects have been presented. It is believed that the improved structure is very suitable for the very large scale integration implementation of the retina and its application systems for CMOS smart sensors.en_US
dc.language.isoen_USen_US
dc.subjectadaptive smoothing functionen_US
dc.subjectBJT-based silicon retinaen_US
dc.subjectBJT smoothing networken_US
dc.subjectCMOS smart sensoren_US
dc.subjecttunable smooth areaen_US
dc.subjectVLSIen_US
dc.titleAn improved BJT-based silicon retina with tunable image smoothing capabilityen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/92.766751en_US
dc.identifier.journalIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMSen_US
dc.citation.volume7en_US
dc.citation.issue2en_US
dc.citation.spage241en_US
dc.citation.epage248en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000080579700010-
dc.citation.woscount19-
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