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dc.contributor.authorHsiao, Yuan-Wenen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2014-12-08T15:46:33Z-
dc.date.available2014-12-08T15:46:33Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-2018-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/31309-
dc.description.abstractA novel ESD protection design for radio-frequency (RF) differential input/output (I/O) pads is proposed and successfully applied to a 5-GHz differential low-noise amplifier (LNA) in a 130-nm CMOS process. In the proposed ESD protection design, an ESD bus and a local ESD clamp device are added between the differential input pads to quickly bypass ESD current, especially under the pin-to-pin ESD-stress condition. With 10.3-mW power consumption under 1.2-V power supply, the differential LNA with the proposed ESD protection design has the human-body-model (HBM) ESD robustness of 3 kV, and exhibits 18-dB power gain and 2.62-dB noise figure at 5 GHz. Experimental results have demonstrated that the proposed ESD protection circuit can be co-designed with the input matching network of LNA to simultaneously achieve excellent RF performance and high ESD robustness.en_US
dc.language.isoen_USen_US
dc.titleAn ESD-Protected 5-GHz Differential Low-Noise Amplifier in a 130-nm CMOS Processen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE IEEE 2008 CUSTOM INTEGRATED CIRCUITS CONFERENCEen_US
dc.citation.spage233en_US
dc.citation.epage236en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000262643900053-
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